NE24283B Datasheet, FET, California Eastern

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NE24283B Features and benefits

* VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz
* HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz
* GATE LENGTH: 0.25 µm
* GATE WIDTH: 200 µm
* HERMETIC MET.

NE24283B Application

NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0 1 10 20 30 Fr.

NE24283B Description

The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved po.

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