* VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz
* HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz
* GATE LENGTH: 0.25 µm
* GATE WIDTH: 200 µm
* HERMETIC MET.
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The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved po.
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